High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space

US9870937B2 · kind B2 · utility

Assignee

• OB Realty, LLC · US

Inventors

• Mehrdad M. Moslehi · Dallas, US
• Karl-Josef Kramer · San Jose, US
• Jay Ashjaee · Cupertino, US
• George D. Kamian · Scotts Valley, US
• David Mordo · Cupertino, US
• Takao Yonehara · Atsugi, JP

Key dates

• Filing date: Jun 9, 2011
• Grant date: Jan 16, 2018
• Expiry date: Jan 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.