Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors
US9871070B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2016 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Feb 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A backside illuminated (BSI) image sensor for biased backside deep trench isolation (BDTI) and/or biased backside shielding is provided. A photodetector is arranged in a semiconductor substrate, laterally adjacent to a peripheral opening in the semiconductor substrate. An interconnect structure is arranged under the semiconductor substrate. A pad structure is arranged in the peripheral opening, and protrudes through a lower surface of the peripheral opening to the interconnect structure. A conductive layer is electrically coupled to the pad structure, and extends laterally towards the photodetector from over the pad structure. A method for manufacturing the BSI image sensor is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.