Trench structure of semiconductor device having uneven nitrogen distribution liner
US9871100B2 · kind B2 · utility
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19References
20Claims
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Assignee
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Key dates
| Filing date | Jul 29, 2015 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Jul 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The substrate has a trench therein. The isolation structure is disposed in the trench. The liner layer is disposed between the substrate and the isolation structure. The liner layer includes nitrogen, and the liner layer has spatially various nitrogen concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.