Smart multi-level RF pulsing methods
US9872373B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2017 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Jan 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/4645
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level, a second power level, and a third power level, providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level, a second power level, and a third power level, and processing the substrate using the first multi-level RF power waveform and the second multi-level RF power waveform to produce a features on the substrate have an aspect ratio of greater than 60:1 while maintaining an etch rate of greater than 170 nm/min.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.