Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems
US9875784B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2017 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Apr 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems are disclosed. The 3D ferroelectric dipole MOSFeFET system includes a bottom dielectric layer, a gate layer disposed above the bottom dielectric layer, and a top dielectric layer disposed on top of the gate layer. The 3D ferroelectric dipole MOSFeFET system also includes at least one source line (SL) line and at least one bit line (BL). At least one interconnect, which extends between the bottom dielectric layer and the top dielectric layer interconnects the at least one SL with the at least one BL. A ferroelectric dipole MOSFeFET(s) is formed at an intersection area of the at least one interconnect and the gate layer. The 3D ferroelectric dipole MOSFeFET system can lead to improved component density and reduced footprint.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.