High temperature silicon oxide atomic layer deposition technology
US9875888B2 · kind B2 · utility
3Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2015 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Oct 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.