Selective inhibition in atomic layer deposition of silicon-containing films

US9875891B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Jon Henri · West Linn, US
• Dennis M. Hausmann · Lake Oswego, US
• Bart J. van Schravendijk · Sunnyvale, US
• Shane Tang · West Linn, US
• Karl Leeser · West Linn, US

Key dates

• Filing date: Jan 5, 2017
• Grant date: Jan 23, 2018
• Expiry date: Jan 5, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.