Method of forming a photoresist layer
US9875892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2015 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | May 8, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a photoresist layer on a semiconductor device is disclosed. An exemplary includes providing a wafer. The method further includes spinning the wafer during a first cycle at a first speed, while a pre-wet material is dispensed over the wafer and spinning the wafer during the first cycle at a second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer during a second cycle at the first speed, while the pre-wet material continues to be dispensed over the wafer and spinning the wafer during the second cycle at the second speed, while the pre-wet material continues to be dispensed over the wafer. The method further includes spinning the wafer at a third speed, while a photoresist material is dispensed over the wafer including the pre-wet material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.