Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

US9876100B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Roman Baburske · Otterfing, DE
• Matteo Dainese · Munich, DE
• Peter Lechner · Vaterstetten, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Johannes Georg Laven · Taufkirchen, DE

Key dates

• Filing date: Dec 9, 2015
• Grant date: Jan 23, 2018
• Expiry date: Dec 9, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

A semiconductor device includes a semiconductor mesa having source zones separated from each other along a longitudinal axis of the semiconductor mesa and at least one body zone forming first pn junctions with the source zones and a second pn junction with a drift zone. Electrode structures are on opposite sides of the semiconductor mesa, at least one of which includes a gate electrode configured to control a charge carrier flow through the at least one body zone. First portions of the at least one body zone are formed between the source zones and separation regions. In the separation regions, at least one of (i) a capacitive coupling between the gate electrode and the semiconductor mesa and (ii) a conductivity of majority charge carriers of the drift zone is lower than outside of the separation region.