Semiconductor device with buried doped region and contact structure

US9876105B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Marko Lemke · Dresden, DE
• Stefan Tegen · Dresden, DE
• Rolf Weis · Dresden, DE

Key dates

• Filing date: Nov 25, 2015
• Grant date: Jan 23, 2018
• Expiry date: Nov 25, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

A semiconductor device includes a buried doped region at a first distance to a main surface of a semiconductor body. A contact structure extends from the main surface to the doped region. The contact structure includes a contact layer formed from a metal-semiconductor alloy that directly adjoins the doped region. The contact structure further includes a fill structure formed from a metal or a conductive metal compound. An insulator structure surrounds the contact structure in cross-sections parallel to the main surface.