Patent · US Active

Method for making a transistor in a stack of superimposed semiconductor layers

US9876121B2 · kind B2 · utility

4Cited by

1References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Sylvain Barraud · Grenoble, FR
Shay Reboh · Grenoble, FR
Maud Vinet · Voiron, FR

Key dates

Filing date	Mar 15, 2016
Grant date	Jan 23, 2018
Priority date	—
Expiry date	Mar 15, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/017
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for making a transistor in which:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.