Patent · US Active

Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materials

US9879341B2 · kind B2 · utility

2Cited by

1References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Kaushal K. Singh · Santa Clara, US
Deepak Jadhav · Gokul, IN
Ashutosh Agarwal · Ghaziabad, IN
Ashish Goel · Stanford, US
Vijay Parihar · Fremont, US
Er-Xuan Ping · Boise, US
Randhir P. S. Thakur · Boise, US

Key dates

Filing date	Jun 21, 2016
Grant date	Jan 30, 2018
Priority date	—
Expiry date	Jul 9, 2036

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C16/54
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.