High purity metallic top coat for semiconductor manufacturing components
US9879348B2 · kind B2 · utility
6Cited by
14References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2017 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | May 15, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12764
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A component for a manufacturing chamber comprises a cold spray coating and an anodization layer on the cold spray coating. The anodization layer has a thickness of about 2-10 mil. The anodization layer comprises a low porosity bottom layer portion having a porosity that is less than about 40-50% and a porous columnar top layer portion having a porosity of about 40-40% and comprising a plurality of columnar nanopores having a diameter of about 10-50 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.