Method for fabricating semiconductor device including fin shaped structure
US9881831B2 · kind B2 · utility
2Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2017 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Mar 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of fabricating the same, the semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure is disposed on the silicon substrate and includes a silicon germanium (SiGe) layer extending from bottom to top in the fin shaped structure. The shallow trench isolation covers a bottom portion of the fin shaped structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.