Method for forming a nanowire structure

US9882026B2 · kind B2 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Kandabara Tapily · Mechanicville, US
• Genji Nakamura · Nirasaki, JP

Key dates

• Filing date: Jan 12, 2016
• Grant date: Jan 30, 2018
• Expiry date: Feb 28, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/121

Abstract

Embodiments of the invention describe a method for forming a nanowire structure on a substrate. According to one embodiment, the method includes a) depositing a first semiconductor layer on the substrate, b) etching the first semiconductor layer to form a patterned first semiconductor layer, c) forming a dielectric layer across the patterned first semiconductor layer, and d) depositing a second semiconductor layer on the patterned first semiconductor layer and on the dielectric layer. The method further includes e) repeating a)-d) at least once, f) following e), repeating a)-c) once, g) etching the patterned first semiconductor layers, the dielectric layers, and the second semiconductor layers to form a fin structure, and h) removing the patterned first semiconductor layers from the fin structure.