Structures for bonding a direct-bandgap chip to a silicon photonic device
US9882073B2 · kind B2 · utility
16Cited by
84References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2014 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Oct 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A composite photonic device comprises a platform, a chip, and a contact layer. The platform comprises silicon. The chip is made of a III-V material. The contact layer has indentations to help control a flow of solder during bonding of the platform with the chip. In some embodiments, pedestals are placed under an optical path to prevent solder from flowing between the chip and the platform at the optical path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.