III-nitride nanowire LED with strain modified surface active region and method of making thereof
US9882086B2 · kind B2 · utility
7Cited by
3References
20Claims
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Key dates
| Filing date | Aug 7, 2015 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Aug 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A core-shell nanowire device includes an eave region having a structural discontinuity from the p-plane in the upper tip portion of the shell to the m-plane in the lower portion of the shell. The eave region has at least 5 atomic percent higher indium content than the p-plane and m-plane portions of the shell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.