Self pre-charging memory circuits
US9886998B2 · kind B2 · utility
2Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2016 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Jun 7, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/067
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to sensing circuit for a memory and methods of use. The memory includes a self-referenced sense amp that is structured to calibrate its individual pre-charge based on a trip-point, with autonomous pre-charge activation circuitry that starts pre-charging a sense-line on each unique entry as soon as a sense has been performed or completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.