Etching method, etching apparatus, and storage medium
US9887092B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2014 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Sep 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is an etching method including: an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece. The etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a third set amount, and supplying a new etching liquid into the etching processing unit by a fourth set amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.