Methods for providing variable feature widths in a self-aligned spacer-mask patterning process
US9887135B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2017 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Apr 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a first mandrel layer above a first process layer. A first implant region is formed in the first mandrel layer. The first mandrel layer is patterned to define a plurality of first mandrel elements. At least a first subset of the first mandrel elements is formed from the first mandrel layer outside the first implant region and a second subset of the first mandrel elements is formed from the first implant region. First spacers are formed on sidewalls of the plurality of first mandrel elements. The first subset of the first mandrel elements are selectively removed without removing the second subset of the first mandrel elements. The first process layer is patterned using the first spacers and the second subset of the first mandrel elements as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.