Conductive structure having an entrenched high resistive layer
US9887158B1 · kind B1 · utility
4Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2016 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Nov 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive structure includes a substrate including a first dielectric layer formed thereon, a first trench formed in the first dielectric layer, a first barrier layer formed in the first trench, a first nucleation layer formed on the first barrier layer, a first metal layer formed on the first nucleation layer, and a first high resistive layer sandwiched in between the first barrier layer and the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.