Multi-gate device and method of fabrication thereof
US9887269B2 · kind B2 · utility
134Cited by
15References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2015 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Nov 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a source/drain feature disposed over a substrate. The source/drain feature includes a first nanowire, a second nanowire disposed over the first nanowire, a cladding layer disposed over the first nanowire and the second nanowire and a spacer layer extending from the first nanowire to the second nanowire. The device also includes a conductive feature disposed directly on the source/drain feature such that the conductive feature physically contacts the cladding layer and the spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.