Semiconductor device
US9887281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2016 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Aug 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first stacked portion above a substrate, the first stacked portion comprising a first nitride semiconductor layer containing aluminum and a second nitride semiconductor layer containing carbon, a third nitride semiconductor layer on the first stacked portion, the third nitride semiconductor layer containing carbon and having a greater thickness than each of the first and second nitride semiconductor layers, the third nitride semiconductor layer having a lower carbon concentration than the second nitride semiconductor layer, a second stacked portion on the third nitride semiconductor, the second stacked portion comprising a fourth nitride semiconductor layer containing aluminum and a fifth nitride semiconductor layer containing carbon, a sixth nitride semiconductor layer on the second stacked portion, a seventh nitride semiconductor layer on the sixth nitride semiconductor layer and containing aluminum, and a first electrode on the seventh nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.