Semiconductor device

US9887293B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Zhibiao Zhou · Singapore, SG
• Ding-Lung Chen · Singapore, SG
• Chen-Bin Lin · Taipei, TW
• Sanpo Wang · Singapore, SG
• Chung-Yuan Lee · Zhubei City, TW
• Chi-Fa Ku

Key dates

• Filing date: Jun 24, 2016
• Grant date: Feb 6, 2018
• Expiry date: Jun 24, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/696

Abstract

A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a dielectric layer, a first gate electrode, a second gate electrode and a charge storage structure. The oxide-semiconductor layer is disposed on the first gate electrode on the substrate. The source/drain regions are disposed on the oxide-semiconductor layer. The first dielectric layer covers on the oxide-semiconductor layer and source/drain regions. A second gate electrode is disposed between source/drain regions and partially covers the oxide-semiconductor layer. The oxide-semiconductor layer may be optionally disposed between the first gate electrode and the oxide-semiconductor layer or be disposed on the second gate electrode.