Patent · US Active

Emitter and method for manufacturing the same

US9887355B2 · kind B2 · utility

1Cited by

2References

22Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Steffen Bieselt · Wehlen, DE
Heiko Froehlich · Radebeul, DE
Thoralf Kautzsch · Dresden, DE
Maik Stegemann · Freital, DE
Mirko Vogt · Dresden, DE

Key dates

Filing date	Mar 24, 2016
Grant date	Feb 6, 2018
Priority date	—
Expiry date	Mar 24, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG01J3/42
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method for manufacturing an emitter comprises providing a semiconductor substrate having a main surface, the semiconductor substrate comprising a cavity adjacent to the main surface. A portion of the semiconductor substrate arranged between the cavity and the main surface of the semiconductor substrate forms a support structure. The method comprises arranging an emitting element at the support structure, the emitting element being configured to emit a thermal radiation of the emitter, wherein the cavity provides a reduction of a thermal coupling between the emitting element and the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.