Narrow source for physical vapor deposition processing
US9892890B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2013 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Mar 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A narrow sputtering source and target which are designed to be installed in a series on a sputtering chamber. Each of the narrow sputtering source has length sufficient to traverse one direction of the sputtering zone, but is much narrower than the orthogonal direction of the sputtering zone. When the sputtering chamber performs a pass-by sputtering process, each of the narrow sputtering sources is sufficiently long to traverse the sputtering zone in the direction orthogonal to the substrate travel direction, but is much narrower than the sputtering zone in the direction of substrate travel. Several narrow sputtering sources are installed so as to traverse the entire sputtering zone in all directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.