Apparatus for forming a thin layer and method of forming a thin layer on a substrate using the same
US9892983B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2015 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Mar 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method of forming an epitaxial layer are provided. The apparatus includes a process chamber in which an epitaxial process is performed to form epitaxial layer on a substrate. A first supplier supplies source gases for the epitaxial layer into the process chamber. A second supplier supplies dopants into the process chamber. A detector detects a composition ratio of the epitaxial layer and a concentration of the dopants in the epitaxial layer during the epitaxial growth process. And a controller controls a mass flow of at least one of the source gases and a mass flow of the dopants in-line with the epitaxial growth process. Accordingly, the layer thickness of the epitaxial layer can be accurately controlled in real time in line with the epitaxial process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.