Semiconductor transistor device and method for fabricating the same
US9893066B2 · kind B2 · utility
1Cited by
6References
5Claims
0Family size
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Key dates
| Filing date | Feb 14, 2017 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Feb 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.