Patent · US Active

Manufacturing method of electronic device and manufacturing method of semiconductor device

US9893116B2 · kind B2 · utility

0Cited by

1References

15Claims

0Family size

Assignee

TOSHIBA MEMORY CORPORATION · JP

Inventors

Shinya Takyu · Saitama, JP
Hideo Numata · Wako, JP
Hiroyuki Okura · Tokyo, JP

Key dates

Filing date	Mar 13, 2015
Grant date	Feb 13, 2018
Priority date	—
Expiry date	Jun 5, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/30625
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A manufacturing method of an electronic device processes a surface of a first wafer, bonds a surface of a second wafer to the processed surface of the first wafer, thins the first wafer by polishing a back surface of the first wafer, the back surface being located on an opposite side of the processed surface, forms a groove along a periphery of the back surface of the thinned first wafer by using a dicing blade, attaches a protective layer to the back surface of the first wafer having the groove, via a bonding layer, and polishes a back surface of the second wafer, the back surface being located on an opposite side of the surface attached to the protective layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.