Lateral DMOS and the method for forming thereof
US9893146B1 · kind B1 · utility
1Cited by
12References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 4, 2016 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Oct 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lateral DMOS device with peak electric field moved below a top surface of the device along a body-drain junction is introduced. The LDMOS has a deep body and a drift region formed by a series of P-type and N-type implants, respectively. The implant doses and depths are tuned so that the highest concentration gradient of the body-drift junction is formed below the surface, which suppresses the injection and trapping of hot holes in the device drain-gate oxide region vicinity, and the associated device performance changes, during operation in breakdown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.