Integrated circuit with a power transistor and a driver circuit integrated in a common semiconductor body

US9893175B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Anton Mauder · Kolbermoor, DE
• Daniel Domes · Schwäbisch Hall, DE
• Franz Hirler · Isen, DE

Key dates

• Filing date: Sep 30, 2013
• Grant date: Feb 13, 2018
• Expiry date: Aug 23, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

An integrated circuit includes a power transistor and a drive circuit. The drive circuit includes at least one drive transistor. The power transistor and the at least one drive transistor are integrated in a common semiconductor body. The power transistor includes at least one transistor cell with a source region, a body region, a drift region, a drain region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. The at least one drive transistor includes active device regions integrated in a well-like structure comprising dielectric sidewall layers.