Integrated semiconductor device and manufacturing method

US9896329B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Thoralf Kautzsch · Dresden, DE
• Heiko Froehlich · Radebeul, DE
• Alessia Scire · Dresden, DE
• Maik Stegemann · Freital, DE
• Bernhard Winkler · Birkenfeld, DE
• Andre Roeth · Dresden, DE
• Steffen Bieselt · Wehlen, DE
• Mirko Vogt · Dresden, DE

Key dates

• Filing date: Jul 13, 2016
• Grant date: Feb 20, 2018
• Expiry date: Jul 13, 2036

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2203/0163
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.