Multi-level storage in ferroelectric memory
US9899073B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 27, 2016 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Jun 27, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5657
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. In some examples, multi-level accessing, sensing, and other operations for ferroelectric memory may be based on sensing multiple charges, including a first charge associated with a dielectric of the memory cell and a second charge associated with a polarization of the memory cell. In some cases, multi-level accessing, sensing, and other operations may be based on transferring a first charge associated with a dielectric of the memory cell to a sense amplifier, isolating the sense amplifier, activating the sense amplifier, transferring a second charge associated with a polarization of the memory cell to the sense amplifier, and activating the sense amplifier a second time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.