Trimming inorganic resists with selected etchant gas mixture and modulation of operating variables
US9899219B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2016 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Aug 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of trimming an inorganic resist in an integration scheme, the method comprising: disposing a substrate in a process chamber, the substrate having an inorganic resist layer and an underlying layer comprising an oxide layer, a silicon nitride layer, and a base layer, the inorganic resist layer having an inorganic structure pattern; performing an inorganic resist trimming process to selectively remove a portion of the inorganic resist structure pattern on the substrate, the trimming process using a first etchant gas mixture and generating a first pattern; controlling selected two or more operating variables of the integration scheme in order to achieve target integration objectives; wherein the first etchant gas mixture comprises a fluorine-containing gas and a diluent gas; and wherein the target integration objectives include a target critical dimension (CD), a target line edge roughness (LER), a target line width roughness (LWR) and a target substrate throughput.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.