Apparatus and method for bonding substrates including changing a stoichiometry of oxide layers formed on the substrates
US9899223B2 · kind B2 · utility
3Cited by
1References
8Claims
0Family size
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Key dates
| Filing date | Sep 25, 2013 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Sep 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67092
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device and method for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate with the following features: a workspace that can be closed, gas-tight, against the environment and can be supplied with a vacuum, the workspace comprises: a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.