Reduction of carrot defects in silicon carbide epitaxy
US9903046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2007 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jul 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30621
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor stricture includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.