Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word lines
US9905305B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jul 13, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Read disturb due to hot electron injection is reduced in a 3D memory device by controlling the magnitude and timing of word line and select gate ramp down voltages at the end of a sensing operation. In an example read operation, a predefined subset of word lines includes source-side and drain-side word lines. For the predefined subset of word lines, word line voltages are ramped down before the voltages of the select gates are ramped down. Subsequently, for a remaining subset of word lines, word line voltages are ramped down, but no later than the ramping down of the voltages of the select gates. The timing of the ramp down of the selected word line depends on whether it is among the predefined subset or the remaining subset. The predefined subset can include a number of adjacent or non-adjacent word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.