Method and solution for cleaning InGaAs (or III-V) substrates
US9905412B2 · kind B2 · utility
2Cited by
12References
20Claims
0Family size
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Key dates
| Filing date | Nov 1, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Nov 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67023
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein generally relate to improved methods and solutions for cleaning a substrate prior to epitaxial growth of Group III-V channel materials. A first processing gas, which includes a noble gas and a hydrogen source, is used to remove the native oxide layer from the substrate surface. A second processing gas, Ar/Cl2/H2, is then used to create a reactive surface layer on the substrate surface. Finally, a hydrogen bake with a third processing gas, which includes a hydrogen source and an arsine source, is used to remove the reactive layer from the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.