Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
US9905414B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | May 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.