Methods of forming silicon germanium tin films and structures and devices including the films
US9905420B2 · kind B2 · utility
449Cited by
630References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Feb 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming silicon germanium tin (SixGe1-xSny) films are disclosed. Exemplary methods include growing films including silicon, germanium and tin in an epitaxial chemical vapor deposition reactor. Exemplary methods are suitable for high volume manufacturing. Also disclosed are structures and devices including silicon germanium tin films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.