Two-dimensional material hard mask, method of manufacturing the same, and method of forming material layer pattern using the hard mask
US9905422B2 · kind B2 · utility
2Cited by
3References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Dec 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A 2D material hard mask includes hydrogen, oxygen, and a 2D material layer having a layered crystalline structure. The 2D material layer may be a material layer including one of a carbon structure (for example, a graphene sheet) and a non-carbon structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.