Methods of self-forming barrier formation in metal interconnection applications
US9905460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Nov 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a self-forming barrier includes selectively removing a portion of a semiconductor dielectric layer to form a three-dimensional pattern within a remaining portion of the dielectric layer. A metal liner layer is disposed on a surface of the pattern to provide a metal lined pattern. A metal filling is disposed over the metal lined pattern, the metal filling being at least partially composed of a metal used in the metal liner layer. Diffusion ions are disposed in one of the metal filling and the metal liner layer. Heat is applied to the metal filling and metal liner layer to diffuse the diffusion ions from one of the metal filling and the metal liner layer into the dielectric layer to form a barrier layer between the metal liner layer and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.