Semiconductor device and manufacturing method thereof
US9905641B2 · kind B2 · utility
4Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Sep 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, at least one first isolation structure, at least two second isolation structure, and an epitaxy structure. The substrate has a plurality of semiconductor fins therein. The first isolation structure is disposed between the semiconductor fins. The semiconductor fins are disposed between the second isolation structures, and the second isolation structures extend into the substrate further than the first isolation structure. The epitaxy structure is disposed on the semiconductor fins. At least one void is present between the first isolation structure and the epitaxy structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.