Methods for plasma activation of evaporated precursors in a process chamber
US9905723B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Sep 16, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The method includes generating a small molecule processing gas, and reacting the small molecule processing gas with a film already deposited on a substrate surface to form a semiconductor film. Additionally, apparatuses that may use the methods are also provided to enable continuous inline CIGS type solar cell formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.