Selective deposition of thin film dielectrics using surface blocking chemistry
US9911591B2 · kind B2 · utility
5Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2016 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Apr 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10363
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.