Pattern decomposition for directed self assembly patterns templated by sidewall image transfer
US9911603B2 · kind B2 · utility
1Cited by
5References
19Claims
0Family size
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Key dates
| Filing date | Jan 3, 2017 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Jan 3, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After forming spacers over a hard mask layer using a sidewall image transfer process, a neutral material layer is formed on the portions of the hard mask layer that are not covered by the spacers. The spacers and the neutral material layer guide the self-assembly of a block copolymer material. The microphase separation of the block copolymer material provides a lamella structure of alternating domains of the block copolymer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.