Semiconductor device and method for manufacturing semiconductor device
US9911753B2 · kind B2 · utility
2Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2016 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Sep 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, an insulating layer is provided above a stairstep portion of a stacked body. A first cover film is provided between the stairstep portion and the insulating layer. The first cover film is of a material different from the insulating layer. A separation portion divides the stacked body and the insulating layer. A second cover film is provided at a side surface of the insulating layer on the separation portion side. The second cover film is of a material different from the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.