Vertical fin field effect transistor with air gap spacers
US9911804B1 · kind B1 · utility
5Cited by
12References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2016 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Aug 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin field effect transistor device with air gaps, including a source/drain layer on a substrate, one or more vertical fin(s) in contact with source/drain layer, a gate metal fill that forms a portion of a gate structure on each of the one or more vertical fin(s), and a bottom void space between the source/drain layer and the gate metal fill.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.