SBFET transistor and corresponding fabrication process
US9911827B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 8, 2016 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Dec 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/647
Abstract
A process for manufacturing a Schottky barrier field-effect transistor is provided. The process includes: providing a structure including a control gate and a semiconductive layer positioned under the gate and having protrusions that protrude laterally with respect to the gate; anisotropically etching at least one of the protrusions by using the control gate as a mask, so as to form a recess in this protrusion, this recess defining a lateral face of the semiconductive layer; depositing a layer of insulator on the lateral face of the semiconductive layer; and depositing a metal in the recess on the layer of insulator so as to form a contact of metal/insulator/semiconductor type between the deposit of metal and the lateral face of the semiconductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.