Predicting data correlation using multivalued logical outputs in static random access memory (SRAM) storage cells
US9916890B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2017 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Feb 21, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Predicting data correlation using multivalued logical outputs in SRAM storage cells including generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points; writing, into storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs: activating a fight port for the storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.